We know that the next generation of DDR5 memory will be fast, and how much that speed will be will depend on several factors. Currently, a large number of companies are working on the speed aspect.
There is a report that the Chinese company Netac Technology plans to create DDR5 DRAM modules, capable of speeds over 10,000MHz.
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Although not confirmed, this news would mean that Netac’s memory could achieve more than 10,000 MT per second.
The company will reportedly use Micron IFA45 Z9ZSB memory chips, and there will be 16GB (2GB x8) modules to begin with. The chips are created in Micron’s 1z nm DRAM process and offer 40-40-40 sub-timings. Last year, Micron pointed out that the company’s DDR5 memory can achieve up to 6400 MT / s.
Netac is not the only company that prepares interesting solutions in the field of DDR5 products. Samsung recently announced that it is creating the world’s first 512GB DDR5 module, with maximum speeds of up to 7200 MT / s.
